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AOD436 - N-Channel MOSFET

Datasheet Summary

Description

The AOD436 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance.

This device is ideally suited for use as a high side switch in CPU core power conversion.

Standard Product AOD436 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 60A (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) RDS(ON) < 13mΩ (VGS = 4.5V) Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B Power Dissipation A C Maximum 30 ±20 60 43 130 30 113 50 25 2.5 1.6 -55 to 175 Units V V A A mJ W W °C TC=25°C G TC=100°C B ID IDM IAR EAR PD PDSM.

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Datasheet Details

Part number AOD436
Manufacturer Alpha & Omega Semiconductors
File Size 141.12 KB
Description N-Channel MOSFET
Datasheet download datasheet AOD436 Datasheet
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www.DataSheet4U.com AOD436 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD436 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOD436 is Pb-free (meets ROHS & Sony 259 specifications). AOD436L is a Green Product ordering option. AOD436 and AOD436L are electrically identical. TO-252 D-PAK D Top View Drain Connected to Tab G S G D S Features VDS (V) = 30V ID = 60A (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) RDS(ON) < 13mΩ (VGS = 4.
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