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AOD466 - N-Channel MOSFET

Description

The AOD466 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Top View D TO-252 D-PAK Bottom View

Features

  • VDS (V) = 25V ID = 30A (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 10V) RDS(ON) < 24 mΩ (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! D GS SG G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy 0.1mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AOD466 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD466 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. -RoHS Compliant -Halogen Free* Top View D TO-252 D-PAK Bottom View Features VDS (V) = 25V ID = 30A (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 10V) RDS(ON) < 24 mΩ (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! D GS SG G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy 0.
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