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AOD464 - 105V N-Channel MOSFET

Datasheet Summary

Description

The AOD464 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications.

Features

  • es VDS (V) = 105V ID = 40 A (VGS =10V) RDS(ON) < 28 mW (VGS =10V) @ 20A RDS(ON) < 31 mW (VGS = 6V) 100% UIS Tested 100% Rg Tested TO-252 Top View D-PAK Bottom View D D G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy L=0.1mH C EAR TC=25°C Power Dissipation B TC.

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Datasheet Details

Part number AOD464
Manufacturer Alpha & Omega Semiconductors
File Size 300.30 KB
Description 105V N-Channel MOSFET
Datasheet download datasheet AOD464 Datasheet
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AOD464 105V N-Channel MOSFET General Description The AOD464 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in high voltage synchronous rectification , load switching and general purpose applications. -RoHS Compliant -Halogen Free* Features VDS (V) = 105V ID = 40 A (VGS =10V) RDS(ON) < 28 mW (VGS =10V) @ 20A RDS(ON) < 31 mW (VGS = 6V) 100% UIS Tested 100% Rg Tested TO-252 Top View D-PAK Bottom View D D G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C ID Pulsed Drain Current C IDM Avalanche Current C IAR Repetitive avalanche energy L=0.
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