Datasheet4U Logo Datasheet4U.com

AOD466 - N-Channel MOSFET

Datasheet Summary

Description

The AOD466 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Top View D TO-252 D-PAK Bottom View

Features

  • VDS (V) = 25V ID = 30A (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 10V) RDS(ON) < 24 mΩ (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! D GS SG G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy 0.1mH C ID IDM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM.

📥 Download Datasheet

Datasheet preview – AOD466

Datasheet Details

Part number AOD466
Manufacturer Alpha & Omega Semiconductors
File Size 152.72 KB
Description N-Channel MOSFET
Datasheet download datasheet AOD466 Datasheet
Additional preview pages of the AOD466 datasheet.

📁 Similar Datasheet

  • AOD464 - N-Channel MOSFET (INCHANGE)
  • AOD464 - N-Channel MOSFET (VBsemi)
  • AOD468 - N-Channel MOSFET (INCHANGE)
  • AOD400 - N-channel 30V MOSFET (VBsemi)
  • AOD403 - P-Channel MOSFET (VBsemi)
  • AOD403 - P-Channel MOSFET (INCHANGE)
  • AOD405 - P-Channel MOSFET (Freescale)
  • AOD405 - P-Channel 30V MOSFET (VBsemi)
  • AOD407 - N-Channel MOSFET (INCHANGE)
  • AOD407 - P-Channel MOSFET (VBsemi)
Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
AOD466 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD466 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. -RoHS Compliant -Halogen Free* Top View D TO-252 D-PAK Bottom View Features VDS (V) = 25V ID = 30A (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 10V) RDS(ON) < 24 mΩ (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested! D GS SG G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy 0.
Published: |