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AOD460 - N-Channel MOSFET

Datasheet Summary

Description

The AOD460 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard Product AOD460 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 25V ID = 25 A (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 10V) RDS(ON) < 24 mΩ (VGS = 4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 25 ±20 25 25 70 20 20 30 15 2.5 1.6 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche e.

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Datasheet Details

Part number AOD460
Manufacturer Alpha & Omega Semiconductors
File Size 150.09 KB
Description N-Channel MOSFET
Datasheet download datasheet AOD460 Datasheet
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Full PDF Text Transcription

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www.DataSheet4U.com AOD460 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD460 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD460 is Pb-free (meets ROHS & Sony 259 specifications). AOD460L is a Green Product ordering option. AOD460 and AOD460L are electrically identical. TO-252 D-PAK Features VDS (V) = 25V ID = 25 A (VGS = 10V) RDS(ON) < 14 mΩ (VGS = 10V) RDS(ON) < 24 mΩ (VGS = 4.
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