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AOD488 - N-Channel MOSFET

Description

The AOD488 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard Product AOD488 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 40V (VGS = 10V) ID = 20 A RDS(ON) < 26 mΩ (VGS = 10V) RDS(ON) < 39 mΩ (VGS = 4.5V) D Top View Drain Connected to Tab G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current C C Maximum 40 ±20 20 15 50 12 22 20 10 2 1.3 -55 to 175 Units V V A A mJ W W °C TC=25°C TC=100°C ID IDM IAR EAR PD PDSM TJ, TSTG TC=25°C Repetitive avalanche energy.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com AOD488 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD488 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD488 is Pb-free (meets ROHS & Sony 259 specifications). AOD488L is a Green Product ordering option. AOD488 and AOD488L are electrically identical. TO-252 D-PAK Features VDS (V) = 40V (VGS = 10V) ID = 20 A RDS(ON) < 26 mΩ (VGS = 10V) RDS(ON) < 39 mΩ (VGS = 4.
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