Datasheet4U Logo Datasheet4U.com

AOD484 - N-Channel MOSFET

General Description

The AOD484 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

This device is suitable for use in PWM, load switching and general purpose applications.

Standard Product AOD484 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = 30V ID = 25 A (VGS = 10V) RDS(ON) < 15 mΩ (VGS = 10V) RDS(ON) < 23 mΩ (VGS = 4.5V) UIS Tested! D Top View Drain Connected to Tab G S http://www. DataSheet4U. net/ G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain 25 TC=25°C G Current TC=100°C 25 ID Pulsed Drain Current Avalanche Current C C C Units V V A A mJ W W °C IDM IAR EAR PD PDSM TJ, TSTG 80 15 33 50 25 2.1 1.3 -.

📥 Download Datasheet

Full PDF Text Transcription for AOD484 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AOD484. For precise diagrams, and layout, please refer to the original PDF.

AOD484 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD484 uses advanced trench technology and design to provide excellent RDS(ON) with low ...

View more extracted text
ed trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOD484 is Pb-free (meets ROHS & Sony 259 specifications). AOD484L is a Green Product ordering option. AOD484 and AOD484L are electrically identical. TO-252 D-PAK Features VDS (V) = 30V ID = 25 A (VGS = 10V) RDS(ON) < 15 mΩ (VGS = 10V) RDS(ON) < 23 mΩ (VGS = 4.5V) UIS Tested! D Top View Drain Connected to Tab G S http://www.DataSheet4U.