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AOD496 - N-Channel MOSFET

Description

The AOD496 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications.

Standard Product AOD496 is Pb-free (meets ROHS & Sony 259 specifications).

Features

  • VDS (V) = 30V ID = 62A (VGS = 10V) RDS(ON) < 9.5mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) TO-252 D-PAK Top View Drain Connected to Tab D G S G D S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.3mH TC=25°C Power Dissipation B Power Dissipation A C Maximum 30 ±20 62 44 120 30 135 62.5 31 2.5 1.6 -55 to 175 Units V.

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www.DataSheet4U.com AOD496 N-Channel Enhancement Mode Field Effect Transistor General Description The AOD496 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is suitable for use as a high side switch in SMPS and general purpose applications. Standard Product AOD496 is Pb-free (meets ROHS & Sony 259 specifications). AOD496L is a Green Product ordering option. AOD496 and AOD496L are electrically identical. Features VDS (V) = 30V ID = 62A (VGS = 10V) RDS(ON) < 9.5mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.
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