Datasheet Details
| Part number | AOD498 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 287.45 KB |
| Description | 100V N-Channel MOSFET |
| Download | AOD498 Download (PDF) |
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Overview: AOD498 100V N-Channel MOSFET General.
| Part number | AOD498 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 287.45 KB |
| Description | 100V N-Channel MOSFET |
| Download | AOD498 Download (PDF) |
|
|
|
The AOD498 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 100V 11A < 140mΩ < 152mΩ TO252 DPAK Top View Bottom View D D D S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC G S Maximum 100 ±20 11 8 20 2.5 2 8 3 45 23 2.1 1.3 -55 to 175 Typ Max 17 25 50 60 2.7 3.3 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 0: August 2012 www.aosmd.com Page 1 of 6 AOD498 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 100 V IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.2 1.7 2.3 V ID(ON) On state drain current VGS=10V, VDS=5V 20 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4.5A TJ=125°C 116 140 mΩ 227 274 VGS=4.5V, ID=3A 121 152 mΩ gFS Forward Transconductance VDS=5V, ID=4.5A 15 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.
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| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AOD498 | N-Channel MOSFET | INCHANGE |
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