Datasheet Details
| Part number | AOD600A70 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 660.25 KB |
| Description | 700V N-Channel Power Transistor |
| Datasheet | AOD600A70-AlphaOmegaSemiconductors.pdf |
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Overview: AOD600A70/AOI600A70 700V, aMOS5 TM N-Channel Power Transistor.
| Part number | AOD600A70 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 660.25 KB |
| Description | 700V N-Channel Power Transistor |
| Datasheet | AOD600A70-AlphaOmegaSemiconductors.pdf |
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• Proprietary aMOS5TM technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Applications • Flyback for SMPS • Charger ,PD Adapter, TV, lighting.
Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V 100% UIS Tested 100% Rg Tested 800V 34A < 0.6Ω 15.5nC 1.8mJ TO-252 DPAK TO-251A IPAK D TopView Bottom View Top View Bottom View D DS DG G S AOD600A70 DS S DG G G S AOI600A70 Orderable Part Number AOD600A70 AOI600A70 Package Type TO252 TO251A Form Tape & Reel Tube Minimum Order Quantity 2500 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Gate-Source Voltage (dynamic) AC( f>1Hz) VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy G MOSFET dv/dt ruggedness Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25°C PD Maximum 700 ±20 ±30 8.5 5 34 2.1 2.2 19 100 20 104 0.8 Units V V V A A mJ mJ V/ns W W/°C Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RqJA RqCS RqJC Typical 45 1 Maximum 55 0.5 1.2 Units °C/W °C/W °C/W Rev.1.2: August 2023 www.aosmd.com Page 1 of 6 AOD600A70/AOI600A70 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current ID=250μA, VGS=0V, TJ=25°C ID=250μA, VGS=0V, TJ=150
| Part Number | Description |
|---|---|
| AOD600A70P | N-Channel Power Transistor |
| AOD600A70R | N-Channel Power Transistor |
| AOD603 | MOSFET |
| AOD603A | 60V Complementary MOSFET |
| AOD604 | MOSFET |
| AOD606 | MOSFET |
| AOD607 | MOSFET |
| AOD607A | 30V Complementary MOSFET |
| AOD609 | 40V Complementary MOSFET |
| AOD609G | Complementary Enhancement Mode Field Effect Transistor |