Datasheet Details
| Part number | AOD600A70P |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 502.96 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AOD600A70P-AlphaOmegaSemiconductors.pdf |
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Overview: AOD600A70P/AOI600A70P 700V, a MOS5 TM Plus N-Channel Power Transistor.
| Part number | AOD600A70P |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 502.96 KB |
| Description | N-Channel Power Transistor |
| Datasheet | AOD600A70P-AlphaOmegaSemiconductors.pdf |
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• Proprietary aMOS5 Plus technology • Low RDS(ON) • Optimized switching parameters for better EMI performance • Enhanced body diode for robustness and fast reverse recovery Product Summary VDS @ Tj,max IDM RDS(ON),max Qg,typ Eoss @ 400V Applications • PFC and PWM stages (Flyback, LLC) of Adapter, PC Silverbox, Server, Gaming Power Supply, Industrial, TV, Lighting 100% UIS Tested 100% Rg Tested 800V 28A < 0.6Ω 15nC 1.6mJ TO-252 DPAK TO-251A IPAK D TopView Bottom View Top View Bottom View D D D D DS DG G S AOD600A70P S GD SD G AOI600A70P Orderable Part Number AOD600A70P AOI600A70P Package Type TO252 TO251A Form Tape & Reel Tube G S Minimum Order Quantity 2500 3500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C L=1mH Repetitive avalanche energy C Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt VDS VGS ID IDM IAR EAR EAS dv/dt Power Dissipation B TC=25°C Derate above 25°C PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL Maximum 700 ±20 7 4.6 28 1.6 1.3 19 100 20 83 0.7 -55 to 150 300 Units V V A A mJ mJ V/ns W W/°C °C °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-CaseD,F Symbol RqJA RqCS RqJC Typical 45 1.2 Maximum 55 0.5 1.5 Units °C/W °C/W °C/W Rev 1.0: April 2022 www.aosmd.com Page 1 of 6 AOD600A70P/AOI600A70P Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID=250μA, VGS=0V, TJ=25°
| Part Number | Description |
|---|---|
| AOD600A70 | 700V N-Channel Power Transistor |
| AOD600A70R | N-Channel Power Transistor |
| AOD603 | MOSFET |
| AOD603A | 60V Complementary MOSFET |
| AOD604 | MOSFET |
| AOD606 | MOSFET |
| AOD607 | MOSFET |
| AOD607A | 30V Complementary MOSFET |
| AOD609 | 40V Complementary MOSFET |
| AOD609G | Complementary Enhancement Mode Field Effect Transistor |