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AOD606 - MOSFET

Description

The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in H-bridge, Inverters and other applications.

Features

  • es n-channel p-channel VDS (V) = 40V -40V ID = 8A (VGS=10V) -8A (VGS = -10V) RDS(ON) RDS(ON) < 33 mΩ (VGS=10V) < 50 mΩ (VGS = -10V) < 47 mΩ (VGS=4.5V) < 70 mΩ (VGS = -4.5V) 100% UIS Tested! Top View D TO-252-4L D-PAK Bottom View D1/D2 S2 G2 S1 G1D1/D2 G1 S1 n-channel G2 S2 p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Max p-channel Drain-Source Voltage VDS 40 -40 Gate-Source Voltage VGS ±20 ±20 Continuous Drain TC=25.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AOD606 Complementary Enhancement Mode Field Effect Transistor General Description The AOD606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. -RoHS Compliant -Halogen Free* Features n-channel p-channel VDS (V) = 40V -40V ID = 8A (VGS=10V) -8A (VGS = -10V) RDS(ON) RDS(ON) < 33 mΩ (VGS=10V) < 50 mΩ (VGS = -10V) < 47 mΩ (VGS=4.5V) < 70 mΩ (VGS = -4.
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