Datasheet Details
| Part number | AON1610 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 231.78 KB |
| Description | 20V N-Channel MOSFET |
| Datasheet | AON1610-AlphaOmegaSemiconductors.pdf |
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Overview: AON1610 20V N-Channel MOSFET General.
| Part number | AON1610 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 231.78 KB |
| Description | 20V N-Channel MOSFET |
| Datasheet | AON1610-AlphaOmegaSemiconductors.pdf |
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Product Summary The AON1610 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=4.5V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) RDS(ON) (at VGS =1.8V) RDS(ON) (at VGS =1.5V) Typical ESD protection 20V 4A < 29mΩ < 34mΩ < 44mΩ < 60mΩ HBM Class 2 DFN 1.6x1.6A Top View Bottom View S D S G Pin 1 D G Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation A TA=70°C PD Junction and Storage Temperature Range TJ, TSTG S Maximum 20 ±8 4 3 16 1.8 1.15 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 56 88 Max 70 110 Units V V A W °C Units °C/W °C/W Rev.1.0 : February 2013 www.aosmd.com Page 1 of 5 AON1610 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 20 V IDSS Zero Gate Voltage Drain Current VDS=20V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±8V ±10 µA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 0.4 0.75 1.1 V ID(ON) On state drain current VGS=4.5V, VDS=5V 16 A VGS=4.5V, ID=4A TJ=125°C 23 29 mΩ 31.5 38 RDS(ON) Static Drain-Source On-Resistance VGS=2.5V, ID=3A 26.5 34 mΩ VGS=1.8V, ID=2A 33.5 44 mΩ VGS=1.5V, ID=1A 43.5 mΩ gFS Forward Transconductance VDS=5V, ID=4A 25 S VSD Diode Forward Voltage IS=1A,VGS=0V 0.67 1 V IS Maximum Body-Diode Continuous Current 2.5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance
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