Datasheet Details
| Part number | AON2407 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 281.20 KB |
| Description | 30V P-Channel MOSFET |
| Download | AON2407 Download (PDF) |
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Overview: AON2407 30V P-Channel MOSFET General.
| Part number | AON2407 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 281.20 KB |
| Description | 30V P-Channel MOSFET |
| Download | AON2407 Download (PDF) |
|
|
|
The AON2407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS =-10V) RDS(ON) (at VGS =-4.5V) RDS(ON) (at VGS =-2.5V) -30V -6.3A < 37.5mΩ < 46mΩ < 70mΩ DFN 2x2B Top View S Bottom View D D D S D Pin 1 G D G S Pin 1 D Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation A C Maximum -30 ±12 -6.3 -5 -34 2.8 1.8 -55 to 150 Units V V A VGS TA=25° C TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG W ° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Symbol t ≤ 10s Steady-State RθJA Typ 37 66 Max 45 80 Units ° C/W ° C/W Rev 0 : Nov 2011 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AON2407 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V C TJ=55° VDS=0V, VGS= ±12V VDS=VGS, ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-6.3A RDS(ON) Static Drain-Source On-Resistance TJ=125° C VGS=-4.5V, ID=-5A VGS=-2.5V, ID=-3A gFS VSD IS Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-6.3A IS=-1A,VGS=0V -0.4 -34 31 51.5 36.5 50.3 24 -0.7 -1 -3.5 746 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 105 70 9.5 17.2 VGS=-10V, VDS=-15V, ID=-6.3A 8 1.4 2.8 5.8 VGS=-10V, VDS=-15V, RL=2.4Ω, RGEN=3Ω IF=-6.3A, dI/dt=500A/µs 7.0 62.0 23.2 19 46 19 21 10 37.5 62 46 70 -0.93 Min -30 -1 -5 ±100 -1.5 Typ Max Units V µA nA V A mΩ mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On s
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