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AON2420 - 30V N-Channel AlphaMOS

Description

Latest Trench Power AlphaMOS (αMOS LV) technology Very Low RDS(on) at 4.5VGS Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS =10V) RDS(ON) (at VGS =4.5V) 30V 8A < 11.7mΩ < 1

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AON2420 30V N-Channel AlphaMOS General Description • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS =10V) RDS(ON) (at VGS =4.5V) 30V 8A < 11.7mΩ < 17.5mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial DFN 2x2B Top View S Bottom View D D D S D Pin 1 G D G D S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current VDS Spike Power Dissipation A C Maximum 30 ±20 8 6 32 36 2.8 1.
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