Datasheet Details
| Part number | AON2411 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 253.99 KB |
| Description | 12V P-Channel MOSFET |
| Download | AON2411 Download (PDF) |
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Overview: AON2411 12V P-Channel MOSFET General.
| Part number | AON2411 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 253.99 KB |
| Description | 12V P-Channel MOSFET |
| Download | AON2411 Download (PDF) |
|
|
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• Latest Trench Power MOSFET technology • Very Low RDS(ON) at 1.8V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Application • Battery path load switch • System load switch Product Summary VDS ID (at VGS=-4.5V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-3.0V) RDS(ON) (at VGS=-2.5V) RDS(ON) (at VGS=-1.8V) Typical ESD protection DFN 2x2C Top View Bottom View -12V -20A < 8mΩ < 10.2mΩ < 11.6mΩ < 17.5mΩ HBM Class 2 D Pin 1 D S G Pin 1 Orderable Part Number AON2411 Package Type DFN 2x2C Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 20 45 G Form Tape & Reel S Minimum Order Quantity 3000 Maximum -12 ±8 -20 -15.5 -80 5.0 3.2 -55 to 150 Units V V A W °C Max 25 55 Units °C/W °C/W Rev.1.0: December 2013 www.aosmd.com Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -12 IDSS Zero Gate Voltage Drain Current VDS=-12V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±8V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250µA -0.3 VGS=-4.5V, ID=-12A TJ=125°C RDS(ON) Static Drain-Source On-Resistance VGS=-3.0V, ID=-11A VGS=-2.5V, ID=-10A VGS=-1.8V, ID=-8A gFS Forward Transconductance VDS=-5V, ID=-12A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=-6V, f=1MHz f=1MHz SWITCHING
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