Datasheet Details
| Part number | AON2420 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 252.87 KB |
| Description | 30V N-Channel AlphaMOS |
| Download | AON2420 Download (PDF) |
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Overview: AON2420 30V N-Channel AlphaMOS General.
| Part number | AON2420 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 252.87 KB |
| Description | 30V N-Channel AlphaMOS |
| Download | AON2420 Download (PDF) |
|
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS =10V) RDS(ON) (at VGS =4.5V) 30V 8A < 11.7mΩ < 17.5mΩ Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial DFN 2x2B Top View S Bottom View D D D S D Pin 1 G D G D S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current VDS Spike Power Dissipation A C Maximum 30 ±20 8 6 32 36 2.8 1.8 -55 to 150 Units V V A V W ° C VGS TA=25° C TA=100° C 100ns TA=25° C TA=70° C ID IDM VSPIKE PD TJ, TSTG Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Symbol t ≤ 10s Steady-State RθJA Typ 37 66 Max 45 80 Units ° C/W ° C/W Rev0 : April 2012 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AON2420 C unless otherwise noted) Electrical Characteristics (TJ=25° Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=8A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6A Forward Transconductance Diode Forward Voltage VDS=5V, ID=8A IS=1A,VGS=0V TJ=125° C 1.2 1.8 9.6 13 13.6 41 0.7 1 3.5 552 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 1.7 227 28 3.4 8.9 VGS=10V, VDS=15V, ID=8A 4.3 1.5 1.7 4.8 VGS=10V, VDS=15V, RL=1.9Ω, RGEN=3Ω IF=8A, dI/dt=100A/µs 3.3 18.5 4.0 13.2 3.2 4.8 12 5.8 Min 30 1 5 ±100 2.2 11.7 15.8 17.5 Typ Max Units V µA nA V mΩ mΩ S V A pF pF pF Ω nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Maximum Body-Diod
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