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AON2707 Datasheet 30V P-Channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AON2707 30V P-Channel MOSFET with Schottky Diode General.

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General Description

The AON2707 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.

Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) Typical ESD protection -30V -4A < 117mΩ < 138mΩ < 193mΩ HBM Class 2 VKA IF VF (at IF=1A) 20V 2A <0.45V Top View DFN 2x2 Bottom View K G S D NC D K G A D A S K Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol MOSFET Drain-Source Voltage VDS -30 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B Schottky reverse voltage C Continuous Forward TA=25° Current A TA=70° C B Schottky Units V V A VGS C TA=25° TA=70° C ID IDM VKA IF IFM PD TJ, TSTG ±12 -4 -3 -15 20 2.5 1.5 15 2.8 1.8 -55 to 150 2.7 1.7 -55 to 150 V A Pulsed Forward Current TA=25° C Power Dissipation A TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter: MOSFET Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Parameter: Schottky Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A W ° C Symbol t ≤ 10s Steady-State RθJA Typ 35 65 36 67 Max 45 85 47 87 Units ° C/W ° C/W ° C/W ° C/W t ≤ 10s Steady-State RθJA Rev0: Dec.

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