Datasheet4U Logo Datasheet4U.com

AON2701 - P-Channel MOSFET

Description

The AON2701/L uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.

AON2701 and AON2701L are electrically identical.

Features

  • VDS (V) = -20V (VGS = -4.5V) ID = -3A RDS(ON) < 120mΩ (VGS = -4.5V) RDS(ON) < 160mΩ (VGS = -2.5V) RDS(ON) < 200mΩ (VGS = -1.8V).

📥 Download Datasheet

📁 Similar Datasheet

  • AON6200L - 30V N-Channel MOSFET (Freescale)
  • AON6405 - P-Channel MOSFET (VBsemi)
  • AON6910A - Dual N-Channel MOSFET (VBsemi)
  • AON7202 - N-Channel 30V MOSFET (VBsemi)
  • AON7405 - P-Channel 30V MOSFET (VBsemi)
  • AON7446 - N-Channel MOSFET (VBsemi)
  • AON7502 - N-Channel 30V MOSFET (VBsemi)
  • AON7702A - N-Channel 30V MOSFET (VBsemi)
  • AON7820 - Dual N-Channel 20V MOSFET (VBsemi)
Other Datasheets by Alpha & Omega Semiconductors

Full PDF Text Transcription

Click to expand full text
AON2701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AON2701/L uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. AON2701 and AON2701L are electrically identical. -RoHS Compliant -Halogen Free* DFN 2x2 Package A NC D Features VDS (V) = -20V (VGS = -4.5V) ID = -3A RDS(ON) < 120mΩ (VGS = -4.5V) RDS(ON) < 160mΩ (VGS = -2.5V) RDS(ON) < 200mΩ (VGS = -1.8V) SCHOTTKY VKA (V) = 20V, IF = 2A, VF<0.45V@1A D A K D G S K Top K G Bottom S Absolute Maximum Ratings T A=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage www.DataSheet.co.kr MOSFET -20 ±8 -3 -2.
Published: |