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AON2707 - 30V P-Channel MOSFET

Description

The AON2707 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.

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AON2707 30V P-Channel MOSFET with Schottky Diode General Description The AON2707 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS=-4.5V) RDS(ON) (at VGS=-2.5V) Typical ESD protection -30V -4A < 117mΩ < 138mΩ < 193mΩ HBM Class 2 VKA IF VF (at IF=1A) 20V 2A <0.
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