Datasheet Details
| Part number | AON2705 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 414.66 KB |
| Description | 30V P-Channel MOSFET |
| Download | AON2705 Download (PDF) |
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Overview: AON2705 30V P-Channel MOSFET with Schottky Diode General.
| Part number | AON2705 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 414.66 KB |
| Description | 30V P-Channel MOSFET |
| Download | AON2705 Download (PDF) |
|
|
|
The AON2705 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.
Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS = -4.5V) Typical ESD protection VKA IF VF (at IF=1A) -30V -3.0A < 108mΩ < 165mΩ HBM Class 3A 20V 2A <0.45V Top View DFN 2x2 Bottom View K G S D NC D K G A D A S K Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol MOSFET Drain-Source Voltage VDS -30 Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current B Schottky reverse voltage Continuous Forward TA=25°C Current A TA=70°C Pulsed Forward Current B TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter: MOSFET Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Parameter: Schottky Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A TA=25°C TA=70°C VGS ID IDM VKA IF IFM PD TJ, TSTG 1.5 0.95 -55 to 150 ±20 -3 -2.4 -16 Schottky Units V V A 20 2.5 1.5 15 1.45 0.92 -55 to 150 V A W °C Symbol t ≤ 10s Steady-State RθJA Typ 35 65 36 67 Max 45 85 47 87 Units °C/W °C/W °C/W °C/W t ≤ 10s Steady-State RθJA Rev0: Aug 2012 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON2705 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V TJ=55°C VDS=0V, VGS= ±16V VDS=VGS, ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-3A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-2.5A Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-3A IS=-1A,VGS=0V TJ=125°C -1.3 -16 89 123 132 6 -0.8 -1 -1.25 180 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 44 25 18.5 4 VGS=-10V, VDS=-15V, ID=-3A 2 0.6 1 8 VGS=-10V, VDS=-15V, RL=5Ω , RGEN=3Ω IF=-3A, dI
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