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AON3818 - Dual N-Channel MOSFET

Description

Trench Power αMOS™ LV technology Low RDS(ON) Low Gate Charge ESD protection RoHS and Halogen-Free Compliant Applications Battery protection switch Mobile device battery charging and discharging Product Summary VDS ID (at VGS=4.5V

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Full PDF Text Transcription

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AON3818 24V Dual N-Channel αMOS™ General Description • Trench Power αMOS™ LV technology • Low RDS(ON) • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=4.0V) RDS(ON) (at VGS=3.7V) RDS(ON) (at VGS=3.1V) RDS(ON) (at VGS=2.5V) Typical ESD protection 24V 8A < 13.
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