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AON3812 - Field Effect Transistor

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Features

  • VDS (V) = 30V ID = 6A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 40mΩ (VGS = 2.5V) The AON3812 uses advanced trench technology to excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AON3812 is Pb-free (meets ROHS & Sony 259 sp.

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Datasheet Details

Part number AON3812
Manufacturer Alpha & Omega Semiconductors
File Size 150.91 KB
Description Field Effect Transistor
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AON3812 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description www.DataSheet4U.com provide Features VDS (V) = 30V ID = 6A (VGS = 10V) RDS(ON) < 27mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) RDS(ON) < 40mΩ (VGS = 2.5V) The AON3812 uses advanced trench technology to excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. Standard Product AON3812 is Pb-free (meets ROHS & Sony 259 specifications). D1 DFN 3x3 Top View Bottom View S2 G2 S1 G1 D2 G1 D2 D1 D1 S1 1.6KΩ G2 1.
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