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AON3406 - 30V N-Channel MOSFET

General Description

The AON3406 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.

Key Features

  • VDS (V) = 30V ID = 10A (VGS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 24mΩ (VGS = 4.5V) DFN 3x3 Top View Bottom View D Top View 1 2 3 4 8 7 6 5 G S Pin 1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 ±20 10 7.8 30 3.0 1.9 -55 to 150 Units V V A VGS C TA=25° TA=70° C TA=25° C TA=70° C ID IDM PD TJ, TSTG W ° C Junction and Storage Tem.

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AON3406 30V N-Channel MOSFET General Description The AON3406 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Features VDS (V) = 30V ID = 10A (VGS = 10V) RDS(ON) < 15mΩ (VGS = 10V) RDS(ON) < 24mΩ (VGS = 4.5V) DFN 3x3 Top View Bottom View D Top View 1 2 3 4 8 7 6 5 G S Pin 1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 ±20 10 7.8 30 3.0 1.