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AON3601 - Field Effect Transistor

General Description

The AON3601 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge.

Key Features

  • n-channel VDS (V) = 30V ID = 6.6A (VGS=10V) RDS(ON) < 29m Ω (VGS=10V) < 42m Ω (VGS=4.5V) p-channel -30V -5A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) < 72mΩ (VGS = -4.5V) free (meets ROHS & Sony 259 specifications). AON3601L is a Green Product ordering option. AON3601 and AON3601L are electrically identical. DFN 3x3 Top View Bottom View S2 G2 S1 G1 D2 D2 D1 D1 G2 D2 D1 G1 S2 S1 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AON3601 Complementary Enhancement Mode Field Effect Transistor General Description The AON3601 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be www.DataSheet4U.com used in power inverters, and other applications.Standard Product AON3601 is Pb- Features n-channel VDS (V) = 30V ID = 6.6A (VGS=10V) RDS(ON) < 29m Ω (VGS=10V) < 42m Ω (VGS=4.5V) p-channel -30V -5A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) < 72mΩ (VGS = -4.5V) free (meets ROHS & Sony 259 specifications). AON3601L is a Green Product ordering option. AON3601 and AON3601L are electrically identical.