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AON3408 - N-Channel MOSFET

General Description

The AON3408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.

Key Features

  • Features V V (V)==30V 30V DS DS(V) 8.8A (V (V ==10V) 10V) ID ID==11A GS GS R R.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AON3408 N-Channel Enhancement Mode Field Effect Transistor General Description The AON3408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance. Standard Product AON3408 is Pb-free (meets ROHS & Sony 259 specifications). Features Features V V (V)==30V 30V DS DS(V) 8.8A (V (V ==10V) 10V) ID ID==11A GS GS R R <24m 14.5m Ω (V Ω GS (VGS = 10V) = 10V) DS(ON) DS(ON)< R R < < 29m 18m Ω Ω (V (V = = 4.5V) 4.5V) DS(ON) DS(ON) GS GS RDS(ON) < 45mΩ (VGS = 2.