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AON3611 - 30V Complementary MOSFET

General Description

The AON3611 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The complementary MOSFETs may be used in inverter and other applications.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AON3611 30V Complementary MOSFET General Description The AON3611 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications. Product Summary N-channel VDS (V) = 30V ID = 5A RDS(ON) < 50mW RDS(ON) < 70mW P-channel VDS (V) = -30V ID = -6A RDS(ON) < 38mW RDS(ON) < 62mW (VGS = ±10V) (VGS = ±10V) (VGS = ±4.5V) D2 D1 DFN 3x3 Top View Bottom View Top View S2 D2 G2 D2 S1 D1 G1 D1 G2 G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max N-channel Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C VGS ±20 5 ID 3.8 IDM 20 TA=25°C Power Dissipation B TA=70°C 2.1 PD 1.