Datasheet Details
| Part number | AON3818 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 331.48 KB |
| Description | Dual N-Channel MOSFET |
| Download | AON3818 Download (PDF) |
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| Part number | AON3818 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 331.48 KB |
| Description | Dual N-Channel MOSFET |
| Download | AON3818 Download (PDF) |
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|
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• Trench Power αMOS™ LV technology • Low RDS(ON) • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Applications • Battery protection switch • Mobile device battery charging and discharging Product Summary VDS ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=4.0V) RDS(ON) (at VGS=3.7V) RDS(ON) (at VGS=3.1V) RDS(ON) (at VGS=2.5V) Typical ESD protection 24V 8A < 13.5mΩ < 14mΩ < 15mΩ < 17mΩ < 21mΩ HBM Class 2 Top View DFN 3x3 Bottom View Pin 1 Top View S2 1 G2 2 S1 3 G1 4 8 7 6 5 D1/D2 D1/D2 D1/D2 D1/D2 G1 D1 G2 S1 D2 S2 Orderable Part Number AON3818 Package Type DFN 3x3 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TA=25°C Current G TA=70°C Pulsed Drain Current C TA=25°C Power Dissipation B TA=70°C VGS ID IDM PD Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL Typ 35 60 15 Form Tape & Reel Minimum Order Quantity 3000 Maximum 24 ±12 8 6 32 2.7 1.7 -55 to 150 Units V V A W °C Max Units 45 °C/W 75 °C/W 20 °C/W Rev.2.0: July 2019 www.aosmd.com Page 1 of 5 AON3818 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage ID=250μA, VGS=0V VDS=24V, VGS=0V VDS=0V, VGS=±10V VDS=VGS, ID=250mA VGS=4.5V, ID=8A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.0V, ID=6A VGS=3.7V, ID=6A VGS=3.1V, ID=4A VGS=2.5V, ID=4A Forward Transconductance VDS=5V, ID=8A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Ca
AON3818 24V Dual N-Channel αMOS™ General.
| Part Number | Description |
|---|---|
| AON3810 | 20V Dual N-Channel MOSFET |
| AON3812 | Field Effect Transistor |
| AON3814 | 20V Dual N-Channel MOSFET |
| AON3816 | 20V Dual N-Channel MOSFET |
| AON3806 | Field Effect Transistor |
| AON3820 | Dual N-Channel MOSFET |
| AON3402 | 20V N-Channel MOSFET |
| AON3406 | 30V N-Channel MOSFET |
| AON3408 | N-Channel MOSFET |
| AON3414 | 30V N-Channel MOSFET |