Datasheet Details
| Part number | AON4807 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 361.62 KB |
| Description | 30V Dual P-Channel MOSFET |
| Download | AON4807 Download (PDF) |
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Overview: AON4807 30V Dual P-Channel MOSFET General.
| Part number | AON4807 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 361.62 KB |
| Description | 30V Dual P-Channel MOSFET |
| Download | AON4807 Download (PDF) |
|
|
|
The AON4807 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS=-10V) RDS(ON) (at VGS=-10V) RDS(ON) (at VGS =-4.5V) -30V -4A < 68mΩ < 105mΩ Top View DFN 3x2A Bottom View S1 G1 S2 G2 Pin 1 D1 Top View 1 2 3 4 8 7 6 5 D2 D1 D1 D2 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C TA=25° C Power Dissipation B TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead TA=25° C TA=70° C VGS ID IDM PD TJ, TSTG http://www.DataSheet4U.net/ Maximum -30 ±20 -4 -3 -18 1.9 1.2 -55 to 150 Units V V A W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 51.5 82 37 Max 65 100 50 Units ° C/W ° C/W ° C/W Rev 1: July 2012 www.aosmd.com Page 1 of 5 datasheet pdf - http://www.DataSheet4U.net/ AON4807 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=-250µA, VGS=0V VDS=-30V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS，ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-4A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-3A Forward Transconductance Diode Forward Voltage VDS=-5V, ID=-4A IS=-1A,VGS=0V TJ=125° C -1.3 -18 54 76 80 8 -0.78 -1 -2.5 290 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 60 40 16 5.8 VGS=-10V, VDS=-15V, ID=-4A http://www.DataSheet4U.net/ Min -30 Typ Max Units V STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current -1 -5 ±100 -1.8 -2.3 68 95 105 µA nA V A mΩ mΩ S V A pF pF pF Ω Maximum Body-Diode Continuous
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