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AON4604 - Field Effect Transistor

General Description

The AON4604 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

The www.DataSheet4U.com complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.

Standard Product AON4604 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • n-channel VDS (V) = 20V ID = 5.4A RDS(ON) < 42mΩ RDS(ON) < 52mΩ RDS(ON) < 72mΩ p-channel -20V -3.8A (VGS= ±4.5V) < 90mΩ (VGS = ±4.5V) < 120mΩ (VGS = ±2.5V) < 170mΩ (VGS = ±1.8V) D1 D2 DFN3X2-8L S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 G1 S1 G2 S2 n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 20 VGS Gate-Source Voltage ±8 Continuous Drain Current A Pulsed Drain Current B TA=25°C Power Dissipation TA=70°C Junction.

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AON4604 Complementary Enhancement Mode Field Effect Transistor General Description The AON4604 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The www.DataSheet4U.com complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications. Standard Product AON4604 is Pb-free (meets ROHS & Sony 259 specifications). Features n-channel VDS (V) = 20V ID = 5.4A RDS(ON) < 42mΩ RDS(ON) < 52mΩ RDS(ON) < 72mΩ p-channel -20V -3.8A (VGS= ±4.5V) < 90mΩ (VGS = ±4.5V) < 120mΩ (VGS = ±2.5V) < 170mΩ (VGS = ±1.