Datasheet Details
| Part number | AON4603 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 186.00 KB |
| Description | Field Effect Transistor |
| Datasheet |
 AON4603 Datasheet
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General Description
The AON4603 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.
The complementary MOSFETs form a high-speed power www.DataSheet4U.com inverter, suitable for a multitude of applications.
Standard Product AON4603 is Pb-free (meets ROHS & Sony 259 specifications).
Key Features
- n-channel VDS (V) = 30V ID = 4A p-channel -30V -3.6A (VGS= ±10V) (VGS = ±10V) (VGS = ±4.5V) RDS(ON) < 75mΩ < 100mΩ RDS(ON) < 115mΩ < 180mΩ D1 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 D2 G1 S1 G2 S2 DFN2X3 n-channel p-channel Units V V A Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Max n-channel VDS Drain-Source Voltage 30 VGS Gate-Source Voltage ±20 Continuous Drain TA=25°C 4 Current A 3.2 ID TA=70°C Pulsed Drain Current B Max p-channel -30 ±20 -3.6 -2.9 -12.