Datasheet Details
| Part number | AON6202 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 257.62 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6202 Download (PDF) |
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| Part number | AON6202 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 257.62 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6202 Download (PDF) |
|
|
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The AON6202 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 24A < 5.5mΩ < 7.5mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 D Top View 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C TC=25° C C TC=100° VGS ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG Maximum 30 ±20 24 19 150 21 17 38 72 35 14 4.2 2.7 -55 to 150 Units V V A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 25 55 2.6 Max 30 65 3.5 Units ° C/W ° C/W ° C/W Rev 1 : March 2011 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6202 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=55° C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=15A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.3 150 4.5 7 5.8 66 0.7 1 40 1450 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 500 38 0.3 21 VGS=10V, VDS=15V, ID=20A 10 3 2.5 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 12 25 1840 720
AON6202 30V N-Channel MOSFET General.
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|---|---|
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