Datasheet Details
| Part number | AON6232 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 364.94 KB |
| Description | 40V N-Channel MOSFET |
| Download | AON6232 Download (PDF) |
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| Part number | AON6232 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 364.94 KB |
| Description | 40V N-Channel MOSFET |
| Download | AON6232 Download (PDF) |
|
|
|
The AON6232 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 40V 85A < 2.5mΩ < 3.6mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View D 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum 40 ±20 85 67 260 22 17 60 180 83 33 2.3 1.4 -55 to 150 Units V V A TC=25° C TC=100° C TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14 40 1.1 Max 17 55 1.5 Units ° C/W ° C/W ° C/W Rev 0: August 2011 www.aosmd.com Page 1 of 6 Free Datasheet http://www.datasheet4u.com/ AON6232 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=40V, VGS=0V C TJ=55° VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current G 2530 VGS=0V, VDS=20V, f=1MHz VGS=0V, VDS=0V, f=1MHz 630 15 0.4 33 VGS=10V, VDS=20V, ID=20A 12 TJ=125° C 1.3 260 2.05 3.2 2.8 100 0.68 1 85 3165 905 52.5 0.85 42 18.2 9.
AON6232 40V N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AON6232A | 40V N-Channel MOSFET |
| AON6230 | 40V N-Channel MOSFET |
| AON6234 | 40V N-Channel MOSFET |
| AON6236 | 40V N-Channel MOSFET |
| AON6200 | 30V N-Channel MOSFET |
| AON6202 | 30V N-Channel MOSFET |
| AON6204 | 30V N-Channel MOSFET |
| AON6206 | 30V N-Channel MOSFET |
| AON6210 | 30V N-Channel MOSFET |
| AON6220 | MOSFET |