Datasheet Details
| Part number | AON6236 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 420.49 KB |
| Description | 40V N-Channel MOSFET |
| Download | AON6236 Download (PDF) |
|
|
| Part number | AON6236 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 420.49 KB |
| Description | 40V N-Channel MOSFET |
| Download | AON6236 Download (PDF) |
|
|
|
The AON6236 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 40V 30A < 7mW < 10.5mW Top View DFN5X6 Bottom View PIN1 Top View S1 S2 S3 G4 8D 7D 6D 5D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 30 24 120 19 15 33 54 39 15.5 4.2 2.7 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 24 53 Maximum Junction-to-Case Steady-State RqJC 2.6 Max 30 64 3.2 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1.0: September 2023 www.aosmd.com Page 1 of 6 AON6236 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 40 V IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C 1 5 mA IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.4 1.85 2.4 V ID(ON) On state drain current VGS=10V, VDS=5V 120 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 5.6 7 8.4 10.5 mW VGS=4.5V, ID=20A 8 10.5 mW
AON6236 40V N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AON6230 | 40V N-Channel MOSFET |
| AON6232 | 40V N-Channel MOSFET |
| AON6232A | 40V N-Channel MOSFET |
| AON6234 | 40V N-Channel MOSFET |
| AON6200 | 30V N-Channel MOSFET |
| AON6202 | 30V N-Channel MOSFET |
| AON6204 | 30V N-Channel MOSFET |
| AON6206 | 30V N-Channel MOSFET |
| AON6210 | 30V N-Channel MOSFET |
| AON6220 | MOSFET |