Datasheet Details
| Part number | AON6234 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 415.03 KB |
| Description | 40V N-Channel MOSFET |
| Download | AON6234 Download (PDF) |
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| Part number | AON6234 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 415.03 KB |
| Description | 40V N-Channel MOSFET |
| Download | AON6234 Download (PDF) |
|
|
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The AON6234 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 40V 85A < 3.4mW < 5.0mW Top View DFN5X6 Bottom View PIN1 Top View S1 S2 S3 G4 8D 7D 6D 5D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C VGS ID IDM IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 40 ±20 85 67 220 20 15 50 125 83 33 2.3 1.4 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 14 40 Maximum Junction-to-Case Steady-State RqJC 1.1 Max 17 55 1.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1.0: September 2023 www.aosmd.com Page 1 of 6 AON6234 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 40 V IDSS Zero Gate Voltage Drain Current VDS=40V, VGS=0V TJ=55°C 1 5 mA IGSS Gate-Body leakage current VDS=0V, VGS=±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.4 1.9 2.4 V ID(ON) On state drain current VGS=10V, VDS=5V 220 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 2.7 3.4 4.2 5.2 mW VGS=4.5V, ID=20A 3.9
AON6234 40V N-Channel MOSFET General.
| Part Number | Description |
|---|---|
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