Datasheet Details
| Part number | AON6232A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 232.72 KB |
| Description | 40V N-Channel MOSFET |
| Download | AON6232A Download (PDF) |
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| Part number | AON6232A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 232.72 KB |
| Description | 40V N-Channel MOSFET |
| Download | AON6232A Download (PDF) |
|
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• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 40V 85A < 2.9mΩ < 4.2mΩ Applications • Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications 100% UIS Tested 100% Rg Tested Top View DFN5x6 Bottom View PIN1 PIN1 Orderable Part Number AON6232A Package Type DFN 5x6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.1mH C IDSM IAS EAS VDS Spike 10µs VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Top View 18 27 36 45 Form Tape & Reel D G S Minimum Order Quantity 3000 Maximum 40 ±20 85 85 260 35 28 60 180 48 113.5 45.5 6.2 4.0 -55 to 150 Units V V A A A mJ V W W °C Typ Max 15 20 40 50 0.9 1.1 Units °C/W °C/W °C/W Rev.1.0: April 2015 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS IDSS IGSS VGS(th) RDS(ON) gFS VSD IS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=40V, VGS=0V Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance VDS=0V, VGS=±20V VDS=VGS, ID=250µA VGS=10V, ID=20A VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current G TJ=55°C TJ=125°C DYNAMIC PARAMETERS C
AON6232A 40V N-Channel MOSFET General.
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|---|---|
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