Datasheet Details
| Part number | AON6206 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 235.39 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6206 Download (PDF) |
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Overview: AON6206 30V N-Channel MOSFET General.
| Part number | AON6206 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 235.39 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6206 Download (PDF) |
|
|
|
Product Summary The AON6206 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance.Power losses are minimized due to an extremely low combination of RDS(ON) and Crss.In addition,switching behavior is well controlled with a "Schottky style" soft recovery body diode.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested 30V 24A < 6.5mΩ < 9mΩ Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 24 19 150 20 16 30 45 31 12 4.2 2.7 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 25 55 3 Max 30 65 4 Rev 0: Nov.
2009 www.aosmd.com D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Page 1 of 6 AON6206 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 5 µA IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 1.8 2.3 V ID(ON) On state drain current VGS=10V, VDS=5V 150 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 5.2 7.7 6.5 9.5 mΩ VGS=4.5V, ID=15A 7 9 mΩ gFS Forward Transconductance V
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