Datasheet Details
| Part number | AON6226 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 325.80 KB |
| Description | N-Channel MOSFET |
| Datasheet |
 AON6226 Datasheet
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| Part number | AON6226 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 325.80 KB |
| Description | N-Channel MOSFET |
| Datasheet |
AON6226 Datasheet
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• Trench Power AlphaSGTTM technology • Low RDS(ON) • Low Gate Charge • RoHS and Halogen-Free Compliant Applications • Synchronus Rectification for AC/DC Quick Charger Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested 100V 48A < 7.9mΩ < 10.2mΩ Top View DFN5x6 Bottom View PIN1 PIN1 Top View 1 8 2 7 3 6 4 5 D G S Orderable Part Number AON6226 Package Type DFN 5x6 Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 48 48 140 17.5 14 33 54 120 108 43 5.0 3.2 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 20 45 Maximum Junction-to-Case Steady-State RθJC 0.9 Max 25 55 1.15 Units °C/W °C/W °C/W Rev.2.0: June 2016 www.aosmd.com Page 1 of 6 AON6226 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETER
AON6226 100V N-Channel AlphaSGT TM General.
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|---|---|
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