Datasheet Details
| Part number | AON6450 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 296.19 KB |
| Description | N-Channel MOSFET |
| Download | AON6450 Download (PDF) |
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| Part number | AON6450 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 296.19 KB |
| Description | N-Channel MOSFET |
| Download | AON6450 Download (PDF) |
|
|
|
The AON6450 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior.
This universal technology is well suited for PWM, load switching and general purpose applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 100V 52A < 14.5mΩ < 17.5mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 D Top View 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case TA=25° C TA=70° C TC=25° C C TC=100° VGS ID IDM IDSM IAR EAR PD PDSM TJ, TSTG Maximum 100 ±25 52 33 110 9 7 41 84 83 33 2.3 1.4 -55 to 150 Units V V A A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14 40 1 Max 17 55 1.5 Units ° C/W ° C/W ° C/W Rev 1: May 2011 www.aosmd.com Page 1 of 7 Free Datasheet http://www.datasheet4u.com/ AON6450 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=100V, VGS=0V TJ=55° C VDS=0V, VGS= ±25V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=7V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V G Min 100 Typ Max Units V STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current 10 50 100 2.8 110 12.1 TJ=125°
AON6450 100V N-Channel MOSFET SDMOS TM General.
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