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AON6403L
P-Channel Power Transistor
General Description
The AON6403L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Product Summary
VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS = -4.5V) -30V -85A < 3.1mΩ < 4.3mΩ
- RoHS Compliant - Halogen Free
100% UIS Tested 100% Rg Tested
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Top View Fits SOIC8 footprint !
G S
DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.