Datasheet Details
| Part number | AON6403 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 464.96 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AON6403_AlphaOmegaSemiconductors.pdf |
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Overview: AON6403 30V P-Channel MOSFET General.
| Part number | AON6403 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 464.96 KB |
| Description | 30V P-Channel MOSFET |
| Datasheet | AON6403_AlphaOmegaSemiconductors.pdf |
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The AON6403 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS = -4.5V) 100% UIS Tested 100% Rg Tested -30V -85A < 3.1mW < 4.3mW Top View DFN5X6 Bottom View PIN1 Top View S1 S2 S3 G4 8D 7D 6D 5D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAR Repetitive avalanche energy L=0.1mH C EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±20 -85 -67 -280 -21 -17 -72 259 83 33 2.3 1.4 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 14 40 Maximum Junction-to-Case Steady-State RqJC 1 Max 17 55 1.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 2.1: September 2023 www.aosmd.com Page 1 of 6 AON6403 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C -1 -5 mA IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=-250mA -1.2 -1.7 -2.2 V ID(ON) On state drain current VGS=-10V, VDS=-5V -280 A RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-20A TJ=125°C 2.6 3.1 3.6 4.4 mW VGS=-4.5V, ID=-20A 3.5 4.3 mW gFS Forward Transconductance VDS=-5V, ID=-20A 82 S VSD Diode Forward Voltage
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