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AON6403
30V P-Channel MOSFET
General Description
The AON6403 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
Product Summary
VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS = -4.5V)
100% UIS Tested 100% Rg Tested
-30V -85A < 3.1mW < 4.3mW
Top View
DFN5X6 Bottom View
PIN1
Top View
S1 S2 S3 G4
8D
7D
6D
5D
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current G
TC=25°C TC=100°C
ID
Pulsed Drain Current C
IDM
Continuous Drain Current
TA=25°C TA=70°C
IDSM
Avalanche Current C
IAR
Repetitive avalanche energy L=0.