Datasheet Details
| Part number | AON6407 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 422.05 KB |
| Description | 30V P-Channel MOSFET |
| Download | AON6407 Download (PDF) |
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| Part number | AON6407 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 422.05 KB |
| Description | 30V P-Channel MOSFET |
| Download | AON6407 Download (PDF) |
|
|
|
The AON6407 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
Product Summary VDS ID (at VGS= -10V) RDS(ON) (at VGS= -10V) RDS(ON) (at VGS = -6V) 100% UIS Tested 100% Rg Tested -30 -85A < 4.5mW < 6.0mW Top View DFN5X6 Bottom View PIN1 Top View D S1 S2 S3 G4 8D 7D 6D 5D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum -30 ±25 -85 -67 -200 -32 -25.5 45 101 83 33 7.3 4.7 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 14 40 Maximum Junction-to-Case Steady-State RqJC 1.1 Max 17 55 1.5 Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1.0: September 2023 www.aosmd.com Page 1 of 6 AON6407 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=-250mA, VGS=0V -30 V IDSS Zero Gate Voltage Drain Current VDS=-30V, VGS=0V TJ=55°C -1 -5 mA IGSS Gate-Body leakage current VDS=0V, VGS=±25V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250mA -1.6 -2.1 -2.6 V ID(ON) On state drain current VGS=-10V, VDS=-5V -200 A RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-20A TJ=125°C 3.3 4.5 4.9 6.5 mW VGS=-6V, ID=-20A 4.4 6 mW gFS Forward Transconductance VDS=-5V, ID=-20A 65 S VSD Diode Forward Voltage IS=-1A,VGS=0V I
AON6407 30V P-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AON6400 | N-Channel MOSFET |
| AON6403 | 30V P-Channel MOSFET |
| AON6403L | N-Channel MOSFET |
| AON6404 | N-Channel MOSFET |
| AON6404A | N-Channel MOSFET |
| AON6404L | N-Channel MOSFET |
| AON6405 | 30V P-Channel MOSFET |
| AON6405L | N-Channel MOSFET |
| AON6406 | 30V N-Channel MOSFET |
| AON6408 | N-Channel MOSFET |