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AON6405L - N-Channel MOSFET

General Description

The AON6405L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for load switch and battery protection applications.

Key Features

  • VDS (V) = -30V (VGS = -10V) ID = -30A RDS(ON) < 7mΩ (VGS = -10V) RDS(ON) < 8mΩ (VGS = -4.5V) ESD Protected! 100% UIS Tested! -RoHS Compliant -Halogen Free Top View Fits SOIC8 footprint ! S S S G D D D D G Rg D DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain G Current Pulsed Drain Current Continuous Drain Current Avalanche Current C C S Maximum -30 ±20 -30 -23 -160 -15 -12 -54 146 83 33 2.5 1.6.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AON6405L P-Channel Enhancement Mode Field Effect Transistor General Description The AON6405L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).This device is ideal for load switch and battery protection applications. Features VDS (V) = -30V (VGS = -10V) ID = -30A RDS(ON) < 7mΩ (VGS = -10V) RDS(ON) < 8mΩ (VGS = -4.5V) ESD Protected! 100% UIS Tested! -RoHS Compliant -Halogen Free Top View Fits SOIC8 footprint ! S S S G D D D D G Rg D DFN5X6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain G Current Pulsed Drain Current Continuous Drain Current Avalanche Current C C S Maximum -30 ±20 -30 -23 -160 -15 -12 -54 146 83 33 2.5 1.