Datasheet Details
| Part number | AON6404A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 189.92 KB |
| Description | N-Channel MOSFET |
| Datasheet | AON6404A_AlphaOmegaSemiconductors.pdf |
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Overview: AON6404A 30V N-Channel MOSFET General.
| Part number | AON6404A |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 189.92 KB |
| Description | N-Channel MOSFET |
| Datasheet | AON6404A_AlphaOmegaSemiconductors.pdf |
|
|
|
Product Summary The AON6404A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for load switch and battery protection applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) ESD protected 100% UIS Tested 100% Rg Tested 30V 85A < 2.3mΩ < 3.0mΩ Top View DFN5X6 Bottom View PIN1 Top View 18 27 36 45 G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentG TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.1mH C IDSM IAS, IAR EAS, EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Maximum 30 ±20 85 67 280 25 19 60 180 83 33 2.3 1.4 -55 to 150 Typ Max 14 17 40 55 0.85 1.5 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1.0: November 2013 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VDS=0V, VGS= ±16V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous CurrentG TJ=55°C TJ=125°C 30 1.3 280 36 1.85 1.9 2.8 2.4 130 0.67 1 5 10 2.4 2.3 3.4 3 1 85 V µA uA V A mΩ mΩ S V A DYNAMI
| Part Number | Description |
|---|---|
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