Datasheet Details
| Part number | AON6406 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 555.93 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet |
 AON6406 Datasheet
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| Part number | AON6406 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 555.93 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet |
AON6406 Datasheet
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• Latest Trench Power LV technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) ESD protected 100% UIS Tested 100% Rg Tested 30V 170A < 2.3mΩ < 3.5mΩ Top View DFN5X6 Bottom View Top View PIN1 1 8 2 7 G 3 6 4 5 Pin 1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain CurrentG TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 14 40 0.85 Maximum 30 ±20 170 110 280 25 19 60 180 110 45 2.3 1.4 -55 to 150 Max 17 55 1.1 D S Units V V A A A mJ W W °C Units °C/W °C/W °C/W Rev 1.0: October 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 36 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±16V 10 uA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.3 1.8 2.4 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 1.9 2.3 mΩ 2.8 3.4 VGS=4.5V, ID=20A 2.4 3.5 mΩ gFS Forward Transconductance VDS=5V, ID=20A 130 S VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diod
AON6406 30V N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AON6400 | N-Channel MOSFET |
| AON6403 | 30V P-Channel MOSFET |
| AON6403L | N-Channel MOSFET |
| AON6404 | N-Channel MOSFET |
| AON6404A | N-Channel MOSFET |
| AON6404L | N-Channel MOSFET |
| AON6405 | 30V P-Channel MOSFET |
| AON6405L | N-Channel MOSFET |
| AON6407 | 30V P-Channel MOSFET |
| AON6408 | N-Channel MOSFET |