Datasheet Details
| Part number | AON6702L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 216.59 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6702L Download (PDF) |
|
|
Overview: AON6702L 30V N-Channel MOSFET SRFET TM General.
| Part number | AON6702L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 216.59 KB |
| Description | 30V N-Channel MOSFET |
| Download | AON6702L Download (PDF) |
|
|
|
Product Summary SRFETTM AON6702L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.
This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 85A < 2mΩ < 3mΩ 100% UIS Tested 100% Rg Tested Top View D DFN5X6 18 27 36 45 G SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Repetitive avalanche energy L=0.1mH C IDSM IAR EAR TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 85 67 260 26 20 72 259 83 33 2.3 1.4 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 14 40 1 Max Units 18 °C/W 55 °C/W 1.5 °C/W Rev 1: July 2009 www.aosmd.com This datasheet has been downloaded from http://www.digchip.com at this page Page 1 of 7 AON6702L Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=1mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=125°C 0.1 mA 100 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 0.1 µA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.8 2.4 V ID(ON) On state drain current VGS=10V, VDS=5V 260 A RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=20A TJ=125°C 1.7 2 mΩ 2.6 3.2
Compare AON6702L distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.
| Part Number | Description |
|---|---|
| AON6702 | 30V N-Channel MOSFET |
| AON6708 | N-Channel MOSFET |
| AON6710 | Field Effect Transistor |
| AON6712 | N-Channel MOSFET |
| AON6716 | N-Channel MOSFET |
| AON6718 | 30V N-Channel MOSFET |
| AON6718L | N-Channel MOSFET |
| AON6752 | N-Channel MOSFET |
| AON6754 | N-Channel MOSFET |
| AON6756 | 30V N-Channel MOSFET |