Datasheet Details
| Part number | AON6716 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 304.93 KB |
| Description | N-Channel MOSFET |
| Download | AON6716 Download (PDF) |
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| Part number | AON6716 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 304.93 KB |
| Description | N-Channel MOSFET |
| Download | AON6716 Download (PDF) |
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|
|
SRFETTM AON6716 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.
This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
TM Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 85A < 2.8mΩ < 4.2mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 D Top View SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode G S 8 7 6 5 PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25° C Power Dissipation B C Maximum 30 ±20 85 67 310 23 18 59 174 83 33 2.3 1.4 -55 to 150 Units V V A VGS TC=25° C C TC=100° TA=25° C TA=70° C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG A A mJ W W ° C C TC=100° TA=25° C TA=70° C Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14 40 1 Max 17 55 1.5 Units ° C/W ° C/W ° C/W Rev 1: November 2010 www.aosmd.com Page 1 of 7 Free Datasheet http://www.datasheet4u.com/ AON6716 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V TJ=125° C VDS=0V, VGS= ±20V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V TJ=125° C 1.2 310 2.3 3.4 3.3 120 0.45 0.7 85 3300 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 560 240 0.2 58 VGS=10V, VDS=15V, ID=20A 29 14 7 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 1
AON6716 30V N-Channel MOSFET SRFET General.
| Part Number | Description |
|---|---|
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