Datasheet Details
| Part number | AON6780 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 278.36 KB |
| Description | N-Channel MOSFET |
| Download | AON6780 Download (PDF) |
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| Part number | AON6780 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 278.36 KB |
| Description | N-Channel MOSFET |
| Download | AON6780 Download (PDF) |
|
|
|
SRFETTM AON6780 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge.
This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
TM Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 30V 85A < 1.7mΩ < 2.2mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 Top View 8 7 6 5 D SRFET Soft Recovery MOSFET: Integrated Schottky Diode G S TM PIN1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C C C Maximum 30 ±12 85 67 320 30 24 68 231 83 33 2.5 1.6 -55 to 150 Units V V A TC=25°C TC=100°C TA=25°C TA=70°C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W °C Avalanche energy L=0.1mH Power Dissipation B TC=25°C TC=100°C TA=25°C Power Dissipation A TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 15 42 1.1 Max 20 50 1.5 Units °C/W °C/W °C/W Rev0 : Oct 2010 www.aosmd.com Page 1 of 7 Free Datasheet http://www.datasheet4u.com/ AON6780 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions ID=10mA, VGS=0V VDS=30V, VGS=0V TJ=125°C VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current G 6300 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 570 360 0.4 50 VGS=10V, VDS=15V, ID=20A 13 15 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω IF=20A, dI/dt=500A/µs 12 22 TJ=125°C 1.2 320 1.4
AON6780 30V N-Channel MOSFET SRFET General.
| Part Number | Description |
|---|---|
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| AON6786 | 30V N-Channel MOSFET |
| AON6788 | N-Channel MOSFET |
| AON6702 | 30V N-Channel MOSFET |
| AON6702L | 30V N-Channel MOSFET |
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| AON6710 | Field Effect Transistor |
| AON6712 | N-Channel MOSFET |
| AON6716 | N-Channel MOSFET |
| AON6718 | 30V N-Channel MOSFET |