Datasheet Details
| Part number | AON6796 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 345.40 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON6796-AlphaOmegaSemiconductors.pdf |
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Overview: AON6796 30V N-Channel MOSFET General.
| Part number | AON6796 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 345.40 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet | AON6796-AlphaOmegaSemiconductors.pdf |
|
|
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• Trench Power αMOS Technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 70A < 3.9mΩ < 5mΩ Applications • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested Top View DFN5X6 Bottom View Top View PIN1 1 2 3 4 PIN1 8 7 6 5 G D SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode S Orderable Part Number AON6796 Package Type DFN 5x6 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.05mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Form Tape & Reel Minimum Order Quantity 3000 Maximum 30 ±12 70 46 120 32 26 30 23 36 31 13 6.2 4 -55 to 150 Units V V A A A mJ V W W °C Typ Max 15 20 40 50 3.1 4 Units °C/W °C/W °C/W Rev.
1.0: January 2015 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.1 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Volta
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