Datasheet Details
| Part number | AON6816 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 341.04 KB |
| Description | 30V Dual N-Channel MOSFET |
| Download | AON6816 Download (PDF) |
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| Part number | AON6816 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 341.04 KB |
| Description | 30V Dual N-Channel MOSFET |
| Download | AON6816 Download (PDF) |
|
|
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant Application • DC/DC Converters Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) Typical ESD protection 100% UIS Tested 100% Rg Tested 30V 16A < 6.2mΩ < 9.6mΩ HBM Class 2 DFN5X6 EP2 Top View S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 G1 D1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C CurrentG TC=100°C Pulsed Drain Current C Continuous Drain TA=25°CG Current TA=70°C Avalanche Current C Avalanche energy L=0.05mH C ID IDM IDSM IAS EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 16 16 64 16 14 35 31 36 21 8 2.8 1.8 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 35 65 5 Max 45 80 6 D2 S2 Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev1.0: December 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±10 µA VGS(th) Gate Threshold Voltage VDS=VGS,ID=250µA 1.2 1.8 2.2 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=16A TJ=125°C 5 6.2 mΩ 6.8 8.4 VGS=4.5V, ID=15A 7.5 9.6 mΩ gFS Forward Transconductance VDS=5V, ID=16A 62 S VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG 0.7 1 16 V A DY
AON6816 30V Dual N-Channel AlphaMOS General.
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